Fuji Electric 2MBI200N-060 IGBT Module 600V 200A
- Schirmer item number
- 100910
- Manufacturer
- Fuji Electric
Available
119.00 €*
100.00 € net, plus 19 % VAT (delivery to Germany)
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Product details & specifications
N series IGBT module with two IGBTs in half-bridge configuration and anti-parallel freewheeling diodes for 600 V and 200 A. The insulated housing has M5 screw terminals, and an internal current limit of approximately three times the rated current is provided.
General
| Manufacturer | Fuji Electric |
|---|---|
| Type / Model | 2MBI200N-060 |
| Item number | 100910 |
| Series | N series |
Technical Specifications
| Collector-emitter voltage VCES | 600 V |
|---|---|
| Gate-emitter voltage VGES | ±20 V |
| Collector current IC (continuous) | 200 A |
| Collector current IC pulse (1 ms) | 400 A |
| Power dissipation PC | 780 W |
| VCE(sat) | max. 2.8 V (VGE = 15 V, IC = 200 A) |
| Gate threshold voltage VGE(th) | 4.5 to 7.5 V |
| Input capacitance Cies | 13200 pF |
| Output capacitance Coes | 2930 pF |
| Reverse transfer capacitance Cres | 1330 pF |
| Turn-on time ton | typ. 0.6 µs, max. 1.2 µs |
| Turn-off time toff | typ. 0.6 µs, max. 1.0 µs |
| Diode forward voltage VF | max. 3.0 V (IF = 200 A) |
| Reverse recovery time trr | max. 300 ns |
| Thermal resistance Rth(j-c) IGBT | max. 0.16 °C/W |
| Thermal resistance Rth(j-c) diode | max. 0.35 °C/W |
| Junction temperature Tj | max. +150 °C |
| Storage temperature | −40 to +125 °C |
| Isolation voltage | 2500 V AC (1 min) |
| Tightening torque | 2.5 to 3.5 Nm (M5) |