Mitsubishi Electric QM75DY-HB Transistor Module 75A 600V
- Schirmer item number
- 129610
- Manufacturer
- Mitsubishi Electric
Available
107.10 €*
90.00 € net, plus 19 % VAT (delivery to Germany)
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Product details & specifications
Isolated bipolar transistor module with two transistors in half-bridge configuration, each rated for 75 A collector current and 600 V collector-emitter voltage. Each leg has an antiparallel freewheeling diode, the housing measures 94 x 34 mm and is isolated at 2500 V AC.
General
| Manufacturer | Mitsubishi Electric |
|---|---|
| Type / Model | QM75DY-HB |
| Item number | 129610 |
| Series | QM |
Technical Specifications
| Circuit | 2 transistors, half bridge (C1, C2E1, E2) |
|---|---|
| Collector-emitter voltage VCEX | 600 V |
| Collector-base voltage VCBO | 600 V |
| Emitter-base voltage VEBO | 7 V |
| Collector current IC (DC) | 75 A |
| Collector reverse current −IC (diode, DC) | 75 A |
| Power dissipation PC (TC = 25 °C) | 350 W |
| Base current IB (DC) | 4.5 A |
| Diode surge current −ICSM | 750 A |
| DC current gain h FE | min. 750 |
| Collector-emitter saturation voltage VCE(sat) | max. 2.5 V (IC = 75 A, IB = 100 mA) |
| Base-emitter saturation voltage VBE(sat) | max. 3.0 V |
| Diode forward voltage | max. 1.8 V |
| Turn-on time ton | max. 2.0 µs |
| Storage time ts | max. 8.0 µs |
| Fall time tf | max. 3.0 µs |
| Thermal resistance Rth(j-c) transistor | max. 0.35 °C/W per half |
| Thermal resistance Rth(j-c) diode | max. 1.3 °C/W per half |
| Junction temperature Tj | −40 to +150 °C |
| Storage temperature | −40 to +125 °C |
| Isolation voltage | 2500 V AC (1 min) |
| Main terminals | M5 |
| Mounting screws | M6 |
| Dimensions | 94 x 34 mm |
| Weight | 210 g (typ.) |
| Approval | UL recognized (File No. E80271) |