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NIEC PDMB200E6 IGBT Transistor Module 200A 600V

NIEC PDMB200E6 IGBT Transistor Module 200A 600V

Schirmer item number
1937
Manufacturer
NIEC

Available

94.96 €*

79.80 € net, plus 19 % VAT (delivery to Germany)

* All prices incl. statutory VAT, plus shipping costs

6.19 €

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We dispatch items in stock within 1–2 working days of receiving payment, or after order confirmation for purchases on invoice. Delivery after dispatch: Germany 1–3 working days, other EU countries 3–7 working days, Switzerland, Norway, Iceland and Liechtenstein 5–10 working days.

(19 available)

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Product details & specifications

IGBT transistor module for industrial power applications with 200 A collector current and 600 V blocking voltage.

General

Manufacturer NIEC
Type / Model NIEC PDMB200E6 IGBT Transistor Module 200A 600V
Article Number 1937

Technical Data

Component Type IGBT Transistor Module
Transistor Type N-Channel Insulated Gate Bipolar Transistor
Collector-Emitter Voltage (VCEO) 600 V
Max. Collector Current 200 A
Max. Operating Temperature 150 °C
Number of Elements 2
Connections 7
RoHS Non-compliant

Frequently asked questions

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